Basanth Jagannathan
24Patents
8h-index
49Co-inventors
75Inventor score
Filing activity: Aug 7, 2000 → Sep 20, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6858532B2 | Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling | Electricity | 31 | Expired |
| US6656809B2 | Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics | Electricity | 28 | Expired |
| US6875279B2 | Single reactor, multi-pressure chemical vapor deposition for semiconductor devices | Emerging Cross-Sectional Technologies | 26 | Expired |
| US6787427B2 | Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics | Electricity | 16 | Expired |
| US6426265B1 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Electricity | 14 | Expired |
| US6780695B1 | BiCMOS integration scheme with raised extrinsic base | Electricity | 13 | Expired |
| US6927476B2 | Bipolar device having shallow junction raised extrinsic base and method for making the same | Electricity | 11 | Expired |
| US6750119B2 | Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6506656B2 | Stepped collector implant and method for fabrication | Electricity | 8 | Expired |
| US7183576B2 | Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6744079B2 | Optimized blocking impurity placement for SiGe HBTs | Electricity | 7 | Expired |
| US7741857B2 | System and method for de-embedding a device under test employing a parametrized netlist | Physics | 4 | Active |
| US6815802B2 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Electricity | 3 | Expired |
| US6780735B2 | Method to increase carbon and boron doping concentrations in Si and SiGe films | Electricity | 3 | Expired |
| US6908866B2 | Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD | Emerging Cross-Sectional Technologies | 3 | Expired |
| US8829572B2 | Structure and layout of a FET prime cell | Electricity | 2 | Active |
| US6660607B2 | Method for fabricating heterojunction bipolar transistors | Electricity | 1 | Expired |
| US8187930B2 | Structure and layout of a FET prime cell | Electricity | 1 | Active |
| US7355221B2 | Field effect transistor having an asymmetrically stressed channel region | Electricity | 1 | Expired |
| US6881259B1 | In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films | Chemistry; Metallurgy | 0 | Expired |
| US7713829B2 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Electricity | 0 | Active |
| US9754071B1 | Integrated circuit (IC) design analysis and feature extraction | Physics | 0 | Active |
| US11916384B2 | Region-based power grid generation through modification of an initial power grid based on timing analysis | Physics | 0 | Active |
| US7173274B2 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.