Airgap for semiconductor devices
US6780753B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2002 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | May 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1036
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention generally provide a method of forming an air gap between conductive elements of a semiconductor device, wherein the air gap has a dielectric constant of approximately 1. The air gap may generally be formed by depositing a dielectric material between the respective conductive elements, depositing a porous layer over the conductive elements and the dielectric material, and then stripping the dielectric material out of the space between the respective conductive elements through the porous layer, which leaves an air gap between the respective conductive elements. The dielectric material may be, for example, an amorphous carbon layer, the porous layer may be, for example, a porous oxide layer, and the stripping process may utilize a downstream hydrogen-based strip process, for example.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.