Stacked gate flash memory device and method of fabricating the same
US6781191B2 · kind B2 · utility
11Cited by
4References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 16, 2003 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Jul 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6894
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A stacked gate flash memory device and method of fabricating the same. A cell of the stacked gate flash memory device in accordance with the invention is disposed in a cell trench within a substrate to achieve higher integration of memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.