Semiconductor device having electrodes containing at least copper nickel phosphorous and tin
US6781234B2 · kind B2 · utility
6Cited by
7References
16Claims
0Family size
Assignees
Inventor
Key dates
| Filing date | Jun 19, 2002 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Jun 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
By a solder bump, a CSP is bonded to a first electrode of the module substrate of a multi-chip module. For this solder bump, a solder added with an alkaline earth metal such as Ba, Be, Ca or Mg is used. Accordingly, upon solder reflow, phosphorous (P) reacts with the alkaline earth metal, thereby forming a P compound. Owing to dispersion of this P compound inside of the solder bump, no P concentrated layer is formed on the Ni film, making it possible to prevent peeling of the solder bump from the first electrode upon solder reflow. Thus, the present invention makes it possible to improve the solder bonding property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.