Electron beam irradiation apparatus, electron beam exposure apparatus, and defect detection method
US6784426B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2003 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Oct 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An electron beam irradiation apparatus which irradiates an electron beam to an object for easily detecting a defect of a backscattered electron detector, including: an electron beam generating section for generating an electron beam; a plurality of backscattered electron detectors for detecting backscattered electrons generated when the electron beam is irradiated on a mark; a plurality of attenuation sections for attenuating signal values indicating quantity of backscattered electrons detected by the plurality of backscattered electron detectors; and a defect detecting section for detecting a defect of the plurality of backscattered electron detectors based on the signal values attenuated by the plurality of attenuation sections, with attenuation factors for the plurality of attenuation sections being varied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.