Diffusion barrier layer and semiconductor device containing same
US6784485B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2000 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Feb 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion barrier layer applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer having an upper surface and a lower surface and a central portion, and being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is more concentrated near the lower and upper surfaces of the diffusion barrier layer as compared to the central portion of the diffusion barrier layer. Methods for making the semiconductor devices are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.