Methods for forming rough ruthenium-containing layers and structures/methods using same

US6784504B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Garo Derderian · Boise, US
• Vishnu K. Agarwal · Boise, US

Key dates

• Filing date: Oct 25, 2001
• Grant date: Aug 31, 2004
• Expiry date: Nov 30, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/682

Abstract

A method for forming a rough ruthenium-containing layer on the surface of a substrate assembly includes providing a ruthenium-containing precursor into the reaction chamber. A rough ruthenium layer may be deposited on the surface of the substrate assembly at a rate of about 100 å/minute to about 500 å/minute using the ruthenium-containing precursor. Further, a rough ruthenium oxide layer may be formed by providing a ruthenium-containing precursor and an oxygen-containing precursor into the reaction chamber to deposit the rough ruthenium oxide layer on the surface of the substrate assembly at a rate of about 100 å/minute to about 1200 å/minute. An anneal of the layers may be performed to further increase the roughness. In addition, conductive structures including a rough ruthenium layer or a rough ruthenium oxide layer are provided. Such layers may be used in conjunction with non-rough ruthenium and/or non-rough ruthenium oxide layers to form conductive structures. For example, such structures may be part of a capacitor structure, e.g., bottom electrode of a capacitor.