Ferroelectric capacitor and process for its manufacture
US6785119B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Nov 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Forming a capacitor, by (a) forming a matrix of ferroelectric capacitor elements on a substrate, (b) forming a CAP layer over the ferroelectric capacitor elements, and (c) etching the CAP layer to a more uniform thickness. A capacitor that has a substrate layer, a matrix of ferroelectric capacitor elements including a first electrode layer substantially fixed relative to the substrate, a second electrode layer, and a ferroelectric layer sandwiched between the first and second electrode layers is disclosed. The capacitor has a shoulder layer extending from the substrate to the matrix, and a CAP layer etched to have substantially constant thickness covering sides of the matrix extending beyond the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.