Combination etch stop and in situ resistor in a magnetoresistive memory and methods for fabricating same
US6785159B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 29, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Aug 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Magnetic memory elements and methods for forming the same, where a magnetic memory element includes an etch stop layer disposed between a lower electrode and a magnetoresistive cell body or stack. The etch stop layer advantageously protects the lower electrode during patterning of the magnetoresistive cell body. The etch stop layer can be patterned with patterning of the magnetoresistive cell body. The etch stop layer can be formed from conductive materials or from resistive materials. When the etch stop layer is formed from resistive materials, the etch stop layer forms an in situ resistor that can isolate a failed memory cell from other memory cells in a corresponding array of cells, such as in an MRAM. This permits the MRAM to continue to utilize other magnetoresistive cells that are coupled to the electrodes in the event of a failure of the magnetoresistive cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.