Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth
US6787181B2 · kind B2 · utility
26Cited by
7References
23Claims
0Family size
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Key dates
| Filing date | Oct 26, 2001 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Dec 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a Bi-layered superlattice material on a substrate using chemical vapor deposition of a precursor solution of trimethylbismuth and a metal compound dissolved in an organic solvent. The precursor solution is heated and vaporized prior to deposition of the precursor solution on an integrated circuit substrate by chemical vapor deposition. No heating steps including a temperature of 650° C. or higher are used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.