Method for making a semiconductor device having an ultra-thin high-k gate dielectric
US6787440B2 · kind B2 · utility
17Cited by
24References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2002 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Dec 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a semiconductor device is described. That method comprises forming on a substrate a buffer layer and a high-k gate dielectric layer, oxidizing the surface of the high-k gate dielectric layer, and then forming a gate electrode on the oxidized high-k gate dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.