Method for fabricating a semiconductor device
US6787459B2 · kind B2 · utility
17Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2002 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Nov 15, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/942
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a method of fabricating a semiconductor device whereby fine patterns are formed with high dimensional accuracy by means of multiple exposures, using a phase shift mask and a trim mask. Phases are periodically assigned to shifter patterns within a given range from patterns generated with the phase shift mask, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.