Barrier stack with improved barrier properties
US6787831B2 · kind B2 · utility
7Cited by
9References
23Claims
0Family size
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Key dates
| Filing date | Jan 15, 2002 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Apr 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An barrier stack for inhibiting diffusion of atoms or molecules, such as O2 is disclosed. The barrier slack includes first and second barrier layers formed from, for example, Ir, Ru, Pd, Rh, or alloys thereof. The first barrier layer is passivated with O2 using, for example, a rapid thermal oxidation (RTO) prior to formation of the second barrier layer. The RTO forms a thin oxide layer on the surface of the first barrier layer. The thin oxide layer passivates the grain boundaries of the first barrier layer as well as promoting mismatching of the grain boundaries of the first and second barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.