Patent · US Expired

Semiconductor memory cell and semiconductor memory device

US6787832B2 · kind B2 · utility

9Cited by

5References

36Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Günter Schmid · Hemhofen, DE
Marcus Halik · Erlangen, DE
Hagen Klauk · Erlangen, DE
Christine Dehm · Koblenzer Straße, DE
Thomas Haneder · Hersbruck, DE
Thomas Mikolajick · Birkenfeld, DE

Key dates

Filing date	Mar 24, 2003
Grant date	Sep 7, 2004
Priority date	—
Expiry date	Mar 24, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH10B51/30
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A semiconductor memory cell has a field-effect transistor device and a ferroelectric storage capacitor. The field-effect transistor device has a channel region that includes or is made of an organic semiconductor material. Besides a first gate electrode of the gate electrode configuration of the field-effect transistor device, an additional selection gate electrode is provided, by way of which the field-effect transistor device can be switched off without influencing the storage dielectric and independently of the first gate electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.