Barrier material for copper structures
US6787912B2 · kind B2 · utility
13Cited by
19References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2002 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Apr 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A barrier material that is particularly suited as a barrier layer in copper interconnects structures found in semiconductor structures. The barrier layer contains one or more regions with one region containing at least 50 atom percent of a copper interface metal. The copper interface metal is selected from ruthenium, rhodium, palladium, silver, gold, platinum, iridium, selenium, tellurium, or alloys thereof. The barrier layer also contains a dielectric interface material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.