Methods and apparatus for characterizing thin films
US6788760B1 · kind B1 · utility
13Cited by
6References
49Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2002 |
| Grant date | Sep 7, 2004 |
| Priority date | — |
| Expiry date | Mar 19, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2445
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods and apparatus are providing for characterizing thin films in an integrated circuit device. A target including multiple layers is scanned using an x-ray emission inducer. X-ray emissions characteristic of materials in the target are measured. In one example, multiple beam energies are used to conduct the scan. In another example, continuously varying beam energies are used. Information such as K-ratios or the intensity of the x-ray emissions is provided to determine the thickness and/or composition of layers in the scan target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.