Method for producing a ferroelectric layer

US6790676B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans Cerva · Munich, DE
• Walter Hartner · Munich, DE
• Frank Hintermaier · Hersbruck, DE
• Joachim Hoepfner · Planegg, DE
• Guenther Schindler · Hersbruck, DE
• Volker Weinrich · Paris, FR
• Franz Winterauer · Newcastle, AU

Key dates

• Filing date: Dec 5, 2002
• Grant date: Sep 14, 2004
• Expiry date: Dec 5, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/682
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing a ferroelectric layer includes preparing a substrate, applying a layer of material, which will be subsequently converted into the ferroelectric layer, and changing the material into the ferroelectric layer by applying an outer electrical field aligned with the direction desired in the ferroelectric material and heat treating the material. By providing a first noble metal electrode on the surface before applying the material that is to become the ferroelectric layer and then subsequently forming a second noble metal electrode on the ferroelectric layer, a ferroelectric storage capacitor can be formed. If the substrate is provided with memory cells, which include at least one transistor for each cell and the above-mentioned ferroelectric storage capacitors, a ferroelectric memory arrangement can be produced.