Semiconductor device and method of manufacturing the same
US6790723B2 · kind B2 · utility
11Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2001 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Oct 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.