Preserving TEOS hard mask using COR for raised source-drain including removable/disposable spacer
US6790733B1 · kind B1 · utility
97Cited by
2References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2003 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Mar 28, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/976
Abstract
The present invention provides a method for preserving an oxide hard mask for the purpose of avoiding growth of epi Si on the gate stack during raised source/drain formation. The oxide hard mask is preserved in the present invention by utilizing a method which includes a chemical oxide removal processing step instead of an aqueous HF etchant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.