Patent · US Expired

Method for fabricating thin metal layers from the liquid phase

US6790737B2 · kind B2 · utility

29Cited by

8References

12Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Manfred Schneegans · Vaterstetten, DE
Wolfgang Jaeger · Göppingen, DE
Michael Rogalli · Rottenburg am Neckar, DE

Key dates

Filing date	Mar 17, 2003
Grant date	Sep 14, 2004
Priority date	—
Expiry date	Mar 17, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/288
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing metal layers on surfaces of semiconductor substrates includes the step of providing a semiconductor substrate having a surface. In this case, a precursor compound of a metal to be deposited is condensed out on the semiconductor surface and subsequently decomposed thermally. The method makes it possible to fill trenches with a high aspect ratio, it being possible to effectively suppress the formation of voids.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.