Method for improvement of edge breakdown caused by edge electrical field at a tunnel oxide of a high-density flash memory by a shielded bird's beak
US6790746B1 · kind B1 · utility
2Cited by
5References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 31, 2003 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Jul 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To improve the edge breakdown caused by edge electrical field at the tunnel oxide of high-density flash memory, a bird's beak is formed at the edge of the active region of the flash memory to prevent the corner of the tunnel oxide layer formed later on the active region from being excessively sharp, which will result in localized intense electrical field, and further lead to breakdown caused by the edge electrical field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.