Semiconductor device structures which utilize metal sulfides

US6791125B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Alexander Demkov · Phoenix, US
• Kurt Eisenbeiser · Tempe, US

Key dates

• Filing date: Sep 30, 2002
• Grant date: Sep 14, 2004
• Expiry date: Sep 30, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691

Abstract

A semiconductor device includes a continuous doped substrate with a surface, a sulfur-based dielectric material layer positioned on the surface of the continuous doped substrate, a dielectric material layer positioned on the sulfur-based dielectric material layer, and a gate contact region positioned on the sulfur-based dielectric material layer. The continuous doped substrate includes silicon (Si) and the sulfur-based dielectric material includes a transition metal sulfide such as strontium zirconium sulfur (SrZrS), barium zirconium sulfur (BaZrS), strontium hafnium sulfur (SrHfS), barium hafnium sulfur (BaHfS), or the like. Further, the gate contact region includes a layer of one of strontium titanium sulfur (SrTiS), barium titanium sulfur (BaTiS), or the like positioned adjacent to the dielectric material layer.