Adaptive correlation of pattern resist structures using optical metrology
US6791679B2 · kind B2 · utility
21Cited by
2References
37Claims
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Key dates
| Filing date | Feb 4, 2003 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Feb 4, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A correlation between develop inspect (DI) and final inspect (FI) profile parameters are established empirically with test wafers. During production, a wafer is measured at DI phase to obtain DI profile parameters and FI phase profile parameters are predicted according to the DI profile parameters and the established correlation. Each wafer is subsequently measured at FI phase to obtain actual FI profile parameters and the correlation is updated with actual DI and FI profile parameters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.