Scatterometry structure with embedded ring oscillator, and methods of using same
US6791697B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 21, 2002 |
| Grant date | Sep 14, 2004 |
| Priority date | — |
| Expiry date | Jun 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In one illustrative embodiment, the method involves forming a ring oscillator that includes a first grating structure comprised of a plurality of gate electrode structures for a plurality of N-channel transistors and a second grating structure comprised of a plurality of gate electrode structures for a plurality of P-channel transistors, and measuring the critical dimension and/or profile of at least one of the gate electrode structures in the first grating structure and/or the second grating structure using a scatterometry tool. In another embodiment, the method further involves forming at least one capacitance loading structure, comprised of a plurality of features, as a portion of the ring oscillator, and measuring the critical dimension and/or profile of at least one of the features of the capacitance loading structure using a scatterometry tool.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.