Diffusion-joined target assemly of high-purity cobalt target and copper alloy backing plate and production method therefor
US6793124B1 · kind B1 · utility
16Cited by
8References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2002 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | May 7, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12771
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a diffusion bonding target assembly of a high purity cobalt target and a copper alloy backing plate diffusion bonded with an aluminum or aluminum alloy having a thickness of 0.5 mm or more as the insert material. Provided is a diffusion bonding target assembly of a high-purity cobalt target and a copper alloy backing plate capable of effectively sputtering a high purity cobalt ferromagnetic target and which does not generate warping or peeling upon diffusion bonding even under severe conditions such as bonding with the backing plate and high power sputtering, and the manufacturing method thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.