Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices
US6794112B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2002 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Dec 3, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/128
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of image-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.