Passivating inorganic bottom anti-reflective coating (BARC) using rapid thermal anneal (RTA) with oxidizing gas
US6794279B1 · kind B1 · utility
19Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 2000 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | May 23, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided, the method including forming a gate dielectric layer above a substrate layer and forming a gate conductor layer above the gate dielectric layer. The method also includes forming an inorganic bottom anti-reflective coating layer above the gate conductor layer and treating the inorganic bottom anti-reflective coating layer with an oxidizing treatment during a rapid thermal anneal process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.