Three layer aluminum deposition process for high aspect ratio CL contacts
US6794282B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2002 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Nov 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes providing a semiconductor device including a conductor formed thereon. A dielectric layer is formed over the conductor and a recess is formed in the dielectric layer by removing a portion of the dielectric layer to expose at least a portion of the conductor. A first layer of aluminum is deposited over the top surface of the dielectric, along the sidewalls of the dielectric layer and over the exposed portion of the conductor without altering the temperature of the semiconductor device. A second layer of aluminum is deposited over the first layer of aluminum at a temperature greater than about 300° C. A third layer of aluminum is deposited over the second layer of aluminum so as to completely fill the recess in the dielectric layer. The third layer of aluminum is slow deposited at a temperature greater than about 300° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.