Plastic substrate for a semiconductor thin film
US6794673B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2001 |
| Grant date | Sep 21, 2004 |
| Priority date | — |
| Expiry date | Dec 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
Abstract
An amorphous silicon thin film includes a plastic substrate as a base, and insulating layers are formed thereon each radiated with a pulse laser beam which removes volatile contaminants like a resist as a pretreatment. A protective layer including a gas barrier layer and a refractory buffer layer is formed on the substrate. Gas penetration from the substrate to the amorphous silicon film is thereby prevented. Conduction of heat produced by energy beam radiation to the substrate is prevented as well. it is possible to increase energy intensity of energy beam radiated for the polycrystallization of the amorphous silicon film to the optimal value for perfect polycrystallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.