Atomic layer deposition (ALD) thin film deposition equipment having cleaning apparatus and cleaning method
US6796316B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 3, 2001 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | May 15, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An atomic layer desposition (ALD) thin film deposition equipment having a cleaning apparatus, this equipment including a reactor in which a wafer is mounted and a thin film is deposited on the wafer, a first reaction gas supply portion for supplying a first reaction gas to the reactor, a second reaction gas supply portion for supplying a second reaction gas to the reactor, a first reaction gas supply line for connecting the first reaction gas supply portion to the reactor, a second reaction gas supply line for connecting the second reaction gas supply portion to the reactor, a first inert gas supply line for supplying an inert gas from inert gas supply source to the first reaction gas supply line, a second inert gas supply line for supplying the inert gas from the inert gas supply source to the second reaction gas supply line, an exhaust line for exhausting the gas from the reactor to the outside, and a cleaning gas supply line connected to the first reaction gas supply line for supplying a cleaning gas for cleaning the reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.