Avalanche photodiode for photon counting applications and method thereof
US6797581B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 24, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Nov 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/225
Abstract
A method for manufacturing an improved APD structure and an improved manner of operating APD's particularly beneficial for a single photon detection applications are provided. An APD is provided having an absorption region, a control region, and a multiplication region, wherein the multiplication region has a k value of approximately 1. In one example the multiplication region comprises a doped InP layer. The field control layer is designed so as to produce a reduction of electric field that is equal to the multiplication region's breakdown electric field, plus or minus 5V/&mgr;m. The method comprises applying a potential across the APD so as to induce an electric field across the multiplication region that exceeds the breakdown field; while having the control region shield the absorption region to prevent excessive noise.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.