Active region corner implantation method for fabricating a semiconductor integrated circuit microelectronic fabrication
US6797587B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Aug 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Within a method for forming an isolation region within a semiconductor substrate, there is, prior to forming the isolation region within an isolation trench formed adjoining an active region of a semiconductor substrate, implanted a dopant into a corner of the active region. The corner of the active region is uncovered by laterally etching an isolation trench mask to form a laterally etched isolation trench mask which serves as an ion implantation mask layer when implanting the dopant into the corner of the active region. The method provides for enhanced performance, and minimal affect of a semiconductor device formed within the active region of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.