Method of manufacturing a semiconductor device with supersaturated source/drain extensions and metal silicide contacts
US6797602B1 · kind B1 · utility
103Cited by
11References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 11, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Feb 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices, such as transistors, with a supersaturated concentration of dopant in the source/drain extension and metal silicide contacts enable the production of smaller, higher speed devices. Supersaturated source/drain extensions are subject to dopant diffusion out from the source/drain extension during high temperature metal silicide contact formation. The formation of lower temperature metal silicide contacts, such as nickel silicide contacts, prevents dopant diffusion and maintains the source/drain extensions in a supersaturated state throughout semiconductor device manufacturing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.