Plasma enhanced CVD low k carbon-doped silicon oxide film deposition using VHF-RF power
US6797643B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Oct 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing a low dielectric constant film on a substrate. In one embodiment, the method includes the steps of positioning the substrate in a deposition chamber, providing a gas mixture to the deposition chamber, in which the gas mixture is comprised of one or more cyclic organosilicon compounds, one or more aliphatic compounds and one or more oxidizing gases. The method further includes reacting the gas mixture in the presence of an electric field to form the low dielectric constant film on the semiconductor substrate. The electric field is generated using a very high frequency power having a frequency in a range of about 20 MHz to about 100 MHz.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.