Method to reduce charge interface traps and channel hot carrier degradation

US6797644B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Victor Watt · Plano, US
• Beth Walden · Wyoming, US
• Brian K. Kirkpatrick · Allen, US
• Edmund G. Russell · Frisco, US

Key dates

• Filing date: Jul 16, 2001
• Grant date: Sep 28, 2004
• Expiry date: Oct 27, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02238
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Using deuterium oxygen during stream oxidation forms an oxidizing vapor. Since deuterium is chemically similar to hydrogen, the oxidation process takes place normally and the silicon-silicon oxide interface is concurrently saturated with deuterium. Saturating the interface with deuterium reduces the interface trap density thereby reducing channel hot carrier degradation.