Flash memory devices with oxynitride dielectric as the charge storage media
US6797650B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Jan 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One aspect of the invention relates to flash memory device that stores charge in a substantially stoichiometric silicon oxynitride dielectric. A stoichiometric silicon oxynitride dielectric can be represented by the formula (Si3N4)x(SiO2)(1-x), where x is from 0-1. A substantially stoichiometric silicon oxynitride dielectric has relatively few atoms that do not fit into the foregoing formula. The flash memory devices of the present invention have fewer defects and lower leakage than comparable SONOS-type flash memory devices. Another aspect of the invention relates to assessing the stoichiometry by FTIR, refractive index measurement, or a combination of the two.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.