Field effect transistor

US6798000B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Richard Luyken · Munich, DE
• Till Schlosser · Dresden, DE
• Thomas Haneder · Hersbruck, DE
• Wolfgang Hönlein · Unterhaching, DE
• Franz Kreupl · Mountain View, US

Key dates

• Filing date: Dec 18, 2002
• Grant date: Sep 28, 2004
• Expiry date: Dec 18, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/938
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A field-effect transistor that having a nanowire, which forms a source region, a channel region and a drain region of the field-effect transistor, the nanowire being a semiconducting and/or metallically conductive nanowire. The field-effect transistor also has at least one nanotube, which forms a gate region of the field-effect transistor, the nanotube being a semiconducting and/or metallically conductive nanotube. The nanowire and the nanotube are arranged at a distance from one another or set up in such a manner that it is substantially impossible for there to be a tunneling current between the nanowire and the nanotube, and that the conductivity of the channel region of the nanowire can be controlled by means of a field effect as a result of an electric voltage being applied to the nanotube.