Method and apparatus for high-resolution in-situ plasma etching of inorganic and metals films

US6798065B2 · kind B2 · utility

Assignee

• Newport Fab, LLC · US

Inventors

• Shao-Wen Hsia · Mission Viejo, US
• Michael Berg · Waiblingen, DE
• Maureen R. Brongo · Laguna Hills, US

Key dates

• Filing date: Sep 19, 2001
• Grant date: Sep 28, 2004
• Expiry date: Sep 19, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67069
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Method and apparatus for plasma etching both metal and inorganic dielectric layers in a single chamber during deep sub-micron semiconductor fabrication. Fluorine based chemistries, or a mixture of fluorine and chlorine based chemistries, are used to etch the inorganic dielectric layer. A switch is then made to chlorine based chemistries, within the same etching chamber, which are utilized to etch the metal layer. Overetching may also be performed with chlorine based chemistries to clear any residuals.