Single package multi-chip RF power amplifier
US6798295B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Jan 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are a multi-chip power amplifier comprising a plurality chips with each chip being a transistor amplifier, and a housing in which all of the semiconductor chips are mounted. A plurality of input leads extend into the housing and a plurality of output leads extend from the housing. A plurality of first matching networks couple a semiconductor chip to an input lead and a plurality of second matching networks couple each semiconductor chip to an output lead whereby each chip has its own input lead and output lead. By providing all amplifier chips within a single housing with matching networks within the housing coupling the chips to the input and output leads, manufacturing cost is reduced and the overall package footprint on a mounting substrate is reduced. Further, the close proximity of the chips within the housing reduces phase differences among signals in the semiconductor chips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.