Simon Wood
21Patents
9h-index
15Co-inventors
72Inventor score
Filing activity: Nov 6, 2002 → Jan 20, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6791417B2 | N-way RF power amplifier circuit with increased back-off capability and power added efficiency using selected phase lengths and output impedances | Electricity | 65 | Expired |
| US6819184B2 | RF transistor amplifier linearity using suppressed third order transconductance | Electricity | 54 | Expired |
| US6798295B2 | Single package multi-chip RF power amplifier | Electricity | 37 | Expired |
| US8076994B2 | RF power transistor packages with internal harmonic frequency reduction and methods of forming RF power transistor packages with internal harmonic frequency reduction | Electricity | 26 | Active |
| US6737922B2 | N-way RF power amplifier circuit with increased back-off capability and power added efficiency using unequal input power division | Electricity | 25 | Expired |
| US9786660B1 | Transistor with bypassed gate structure field | Electricity | 21 | Active |
| US7193473B2 | High power Doherty amplifier using multi-stage modules | Electricity | 15 | Expired |
| US8592966B2 | RF transistor packages with internal stability network including intra-capacitor resistors and methods of forming RF transistor packages with internal stability networks including intra-capacitor resistors | Electricity | 11 | Active |
| US9741673B2 | RF transistor packages with high frequency stabilization features and methods of forming RF transistor packages with high frequency stabilization features | Electricity | 11 | Active |
| US9947616B2 | High power MMIC devices having bypassed gate transistors | Electricity | 8 | Active |
| US8330265B2 | RF transistor packages with internal stability network and methods of forming RF transistor packages with internal stability networks | Electricity | 6 | Active |
| US9407214B2 | MMIC power amplifier | Electricity | 5 | Active |
| US9515011B2 | Over-mold plastic packaged wide band-gap power transistors and MMICS | Electricity | 5 | Active |
| US10692998B2 | Bypassed gate transistors having improved stability | Electricity | 5 | Active |
| US10268789B1 | Transistor amplifiers having node splitting for loop stability and related methods | Electricity | 3 | Active |
| US10128365B2 | Bypassed gate transistors having improved stability | Electricity | 2 | Active |
| US9472480B2 | Over-mold packaging for wide band-gap semiconductor devices | Electricity | 1 | Active |
| US9641163B2 | Bandwidth limiting methods for GaN power transistors | Electricity | 0 | Active |
| US12230701B2 | Bypassed gate transistors having improved stability | Electricity | 0 | Active |
| US11575037B2 | Bypassed gate transistors having improved stability | Electricity | 0 | Active |
| US9565642B2 | GaN amplifier for WiFi applications | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.