Low cost, high density diffusion diode-capacitor
US6798641B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Aug 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/62
Abstract
A multiple-layer diffusion junction capacitor structure includes multiple layers of inter-digitated P-type dopant and N-type dopant formed in a semiconductor substrate. An opening in a hard mask is formed taking care to control the angle of the sidewall using a dry, anisotropic etching process. P-type and N-type dopant are then implanted at positive and negative shallow angles, respectively, each with a different energy and dose. By utilizing the properly determined implant angles, implant energies and implant doses for each of the dopant types, a high capacitance and high density diode junction capacitor, with inter-digitated N-type and P-type regions in the vertical direction is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.