Method for removing photoresist and post-etch residue using activated peroxide followed by supercritical fluid treatment
US6800142B1 · kind B1 · utility
17Cited by
6References
46Claims
0Family size
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Key dates
| Filing date | May 30, 2002 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Jul 25, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
Methods for cleaning semiconductor wafers are presented. Contaminants, particularly photoresist and post-etch residue, are removed from semiconductor wafers. A wafer or wafers is first treated with a peroxide-containing medium, for example, to oxidatively cleave bond structures of contaminants on the wafer work surface. Excitation energy is used to activate the peroxide-containing medium toward the formation of radical species. After treatment with the peroxide-containing medium, a supercritical fluid treatment is used to remove any remaining contaminants as well as to condition the wafer for subsequent processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.