Precision dielectric etch using hexafluorobutadiene
US6800213B2 · kind B2 · utility
7Cited by
19References
22Claims
0Family size
Inventors
Key dates
| Filing date | Jun 7, 2002 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Jan 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.