Hidehiro Kojiri
10Patents
3h-index
27Co-inventors
60Inventor score
Filing activity: Feb 17, 2000 → Oct 9, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6432318B1 | Dielectric etch process reducing striations and maintaining critical dimensions | Electricity | 13 | Expired |
| US8507304B2 | Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) | Electricity | 12 | Active |
| US6800213B2 | Precision dielectric etch using hexafluorobutadiene | Electricity | 7 | Expired |
| US8138069B2 | Substrate pretreatment for subsequent high temperature group III depositions | Electricity | 3 | Active |
| US8778783B2 | Methods for improved growth of group III nitride buffer layers | Electricity | 3 | Active |
| US9431477B2 | Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) | Electricity | 1 | Active |
| US11145504B2 | Method of forming film stacks with reduced defects | Electricity | 0 | Active |
| US8980002B2 | Methods for improved growth of group III nitride semiconductor compounds | Chemistry; Metallurgy | 0 | Active |
| US8853086B2 | Methods for pretreatment of group III-nitride depositions | Electricity | 0 | Active |
| US10755903B2 | RPS defect reduction by cyclic clean induced RPS cooling | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.