Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US6800218B2 · kind B2 · utility
24Cited by
15References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2001 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Aug 23, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An abrasive free formulation for chemical mechanical polishing and method for using the formulation for polishing copper and related materials. The abrasive free formulation has a high removal rate on copper and a low removal rate on barrier material. The abrasive free formulation comprises at least an oxidizing agent and an activating agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.