Film forming method by radiating a plasma on a surface of a low dielectric constant film
US6800546B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2002 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Mar 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76829
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called “anchor effect”.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.