Forming tapered lower electrode phase-change memories
US6800563B2 · kind B2 · utility
177Cited by
8References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 11, 2001 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Dec 16, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
Abstract
A phase-change memory may have a tapered lower electrode coated with an insulator. The coated, tapered electrode acts as a mask for a self-aligned trench etch to electrically separate adjacent wordlines. In some embodiments, the tapered lower electrode may be formed over a plurality of doped regions, and isotropic etching may be used to taper the electrode as well as part of the underlying doped regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.