Method of testing the electrostatic discharge performance of an IC device
US6801046B1 · kind B1 · utility
1Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2000 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Jun 12, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for non-destructively testing an IC device to determine the ESD performance. A laser beam is used to probe the diffusions of the device. The amount of light absorbed by the diffusions is determined by monitoring the degree to which light is reflected by the device. The amount of reflection is related to the ESD susceptibility of the device in that the greater the amount of reflection, the worse the ESD performance of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.