Heating system, method for heating a deposition or oxidation reactor, and reactor including the heating system

US6802712B2 · kind B2 · utility

Assignees

• Infineon Technologies SC 300 GmbH & Co. KG · DE
• Aviza Technology Limited · GB

Inventors

• Henry Bernhardt · Dresden, DE
• Thomas Seidemann · Dresden, DE
• Michael Stadtmueller · Villach, AT

Key dates

• Filing date: Oct 14, 2003
• Grant date: Oct 12, 2004
• Expiry date: Oct 14, 2023

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B33/005
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A heating system, a method for heating a deposition reactor or an oxidation reactor, and a reactor utilizing the heating system are particularly suited for low-pressure chemical vapor deposition or oxidation. A heating system is particularly useful for heating a reactor in which a plurality of wafers is held perpendicularly to the reactant gas flowing direction that is parallel to the longitudinal axis of the reactor, to enable a deposition or oxidation reaction. The heating system is adapted to change the reactor temperature during the process. In addition, a method heats a reactor to enable a reaction. Preferably, each of a plurality of reactor zones, into which the reactor is divided in a direction parallel to the reactant gas flowing direction, is heated at a different temperature profile indicating the temperature of this specific zone versus time. Thereby, the in-plane uniformity of deposited or oxidized layers can be largely improved.