Patent · US Expired

System and method for lithography process monitoring and control

US6803554B2 · kind B2 · utility

73Cited by
68References
49Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 7, 2003
Grant dateOct 12, 2004
Priority date
Expiry dateNov 7, 2023

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/7065
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

In one aspect, the present invention is a technique of, and a system and sensor for measuring, inspecting, characterizing and/or evaluating optical lithographic equipment, methods, and/or materials used therewith, for example, photomasks. In one embodiment of this aspect of the invention, the system, sensor and technique measures, collects and/or detects an aerial image produced or generated by the interaction between the photomask and lithographic equipment. An image sensor unit may measure, collect, sense and/or detect the aerial image in situ—that is, the aerial image at the wafer plane produced, in part, by a product-type photomask (i.e., a wafer having integrated circuits formed during the integrated circuit fabrication process) and/or by associated lithographic equipment used, or to be used, to manufacture of integrated circuits.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.